Base transit time of graded-base Si/SiGe HBTs considering recombination lifetime and velocity saturation

Chang, S. T.S. T.ChangLiu, C. W.C. W.LiuLu, S. C.S. C.Lu2009-03-252018-07-062009-03-252018-07-062004http://ntur.lib.ntu.edu.tw//handle/246246/148196application/pdf391999 bytesapplication/pdfen-USBase transit time of graded-base Si/SiGe HBTs considering recombination lifetime and velocity saturationjournal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/148196/1/38.pdf