黃建璋臺灣大學：光電工程學研究所鄭允瑋Cheng, Yun-WeiYun-WeiCheng2007-11-252018-07-052007-11-252018-07-052007http://ntur.lib.ntu.edu.tw//handle/246246/50740本研究中，我們使用離子佈植技術來製作電流導向結構。透過此電流導向結構來改變電流的流向，改善元件的電流擴散並降低電流群聚效應。藉由減少由量子井所放出的光被金屬電極所吸收或反射，我們可以提高光汲出效率以及光輸出的強度。離子佈植技術具有能夠改變材料摻雜濃度的特性，因此我們在傳統的製程步驟中加入一個佈植的程序，將欲製作電流導向結構之P型氮化鎵的材料區域有效摻雜濃度降低。因此其有效濃度將低於周遭區域而形成一個相對阻抗值較大的區域。再利用電流傾向於流經阻抗值較低的區域而強制提高金屬電極所覆蓋區域以外的電流密度。由實驗結果我們發現在20mA的輸入電流下，最高可以將光輸出功率提高達到30.3%。In this research, we fabricate the current diverting structure by using ion implantation technology. With this structure, we can change the current flowing path to improve current spreading of the device and reduce current crowding effect. By reducing the light absorption and reflection by metal electrodes, we can increase the light extraction efficiency and light output power. Ion implantation technology has the property of changing the doping concentration of the material. Therefore we add a step of implantation in the conventional process steps to reduce the doping concentration of the p-type GaN where we want to fabricate the current diverting structure. By this, we have an area with lower concentration compared with the surrounding area and as a result, the higher resistance. As we know that the current tends to flow through a path with lower resistance, we can increase the current density of the area outside of the metal electrode. The experimental results show that at 20mA current injection, the maximum of output power enhancement is 30.3%.口試委員會審定書………………………………………………………………………I 誌謝……………………………………………………………………………………...II 中文摘要……………………………………………………………………………….III 英文摘要……………………………………………………………………………….IV 第一章 簡介……………………………………………………………………….......1 1-1 論文架構………………………………………………………………………1 1-2 白光發光二極體簡介…………………………………………………………2 1-3 氮化鎵之P型區域電流擴散簡介……………………………………………3 1-4 文獻探討………….………………………………………...…………………3 1-5 研究動機………………………………………………………………………4 參考文獻…………………………………………………………………………...9 第二章 離子佈植…………………………………………………………………….11 2-1 簡介…………………………………………………………..………………11 2-2 離子佈植的機制…………………………………………………………......11 2-2-1 阻滯機制………………………………………………………….......11 2-2-2 離子射程……………………………………………………………..12 2-2-3 通道效應……………………………………..………………………12 2-2-4 損壞與熱退火………………………………………………………..13 2-3 離子佈植的硬體……………………………………………………………..13 2-3-1 氣體系統…………………………………………..…………………14 2-3-2 真空系統……………………………………………………………..14 2-3-3 電機系統……………………………………………………………..14 2-3-4 控制系統……………………………………………………………..14 2-3-5 射束線系統………………………………………..…………………14 2-4 佈植參數的選擇……………………………………………………………..15 參考文獻………………………………………………………………………….20 第三章 發光二極體晶片製作……………………………………………………….21 3-1 簡介…………………………………………………………………………..21 3-2 儀器介紹……………………………………………………………………..21 3-2-1 有機金屬化學氣相沉積法…………………………………………...22 3-2-2 電感耦合電漿離子蝕刻機…………………………………………...22 3-2-3 電漿輔助化學氣相沉積系統………………………………………...22 3-2-4 離子佈植機…………………………………………………………...22 3-2-5 電子槍蒸鍍機………………………………………………………...23 3-2-6 濺鍍機………………………………………………………………...23 3-2-7 快速熱退火及爐管…………………………………………………...23 3-2-8 掃瞄式電子顯微鏡…………………………………………………...23 3-3 晶片結構……………………………………………………………………..24 3-4 晶片製作流程………………………………………………………………..24 參考文獻………………………………………………………………………….31 第四章 研究結果…………………………………………………………………….33 4-1 簡介…………………………………………………………………………..33 4-2 各樣品基本參數……………………………………………………………..34 4-3 實驗數據分析………………………………………………………………..35 4-3-1 樣品一實驗數據分析………………………………………………...35 4-3-2 樣品二實驗數據分析………………………………………………...36 4-3-3 樣品三實驗數據分析………………………………………………...37 4-3-4 樣品四實驗數據分析………………………………………………...37 4-4 實驗結果小結………………………………………………………………..38 參考文獻……………………………………………….........................................50 第五章 結論………………………………………………………………………….511738799 bytesapplication/pdfen-US離子佈植電流導向結構選擇性高阻抗區電流擴散電流群聚效應ion implantationcurrent diverting structureselectively high resistance areacurrent spreadingcurrent crowding effectthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/50740/1/ntu-96-R94941023-1.pdf