2016-08-012024-05-13https://scholars.lib.ntu.edu.tw/handle/123456789/650611摘要:隨著半導體製程的進步,近年來處理器的性能不斷增強,其對數據互聯的需求也隨之持續上升。電氣互聯(EI)與光學互聯(OI)的特性無法滿足晶片之間短距離通信的需求。太赫茲互聯利用光波與微波之間的頻譜,具有高能量效率、高頻寬密度、低成本與較佳彈性的優勢。由於矽製程的演進,在CMOS製程上實現太赫茲互聯的電路也成為可能。計畫中規劃了系統的鏈路預算,並且在此基礎之上推算該系統的可以達到0.75 pJ/bit的能量效率。系統預計以65 nm或更高階的CMOS製程實現,初步的分析證明該製程可以滿足計畫的需求。目前關於太赫茲通道的研究也顯示在太赫茲的頻段上可以達成較低的損耗。本計畫預期分三年完成研究,成果包含200GHz的子電路及單晶片系統,以及與MEMS製程的通道之整合,並視情況設計更高頻率的電路及系統。<br> Abstract: The performance of processors is improving continuously with the evolution of semiconductor processes. Coincide with this, the requirement for capacity of interconnections are also growing. The techniques of electrical interconnection (EI) and optical interconnection (OI) are not applicable for short range inter-/intra-chip communication. Tera-hertz interconnection (TI), utilizing the frequency spectrum between optical frequencies and microwave, have the advantages of high energy efficiency, high bandwidth density, low cost and better flexibility. With the evolution of silicon processes, implementation of THz circuits on CMOS is feasible. In this proposal, we have planed the link budget of the system. It is estimated that the system will achieve an energy effect of 0.75 pJ/bit based on this link budget. The system is planned to be implemented in 65 nm CMOS process. The basic analysis shows that this process will satisfy the requirement of this project. It is shown that low loss is possible in the frequency of TI from the researches of THz channel. The goals of this project in three years include 200 GHz CMOS circuits and system, and the integration with the MEMS channel. Higher frequency circuits and system may possibly be attempted also.太赫茲互聯系統應用CMOS收發機THzInterconnect system connectCMOSTransceiver應用於太赫茲互聯互補式金氧半場效電晶體收發機之研究