Growth mechanism of atomic layer deposited Al<inf>2</inf>O<inf>3</inf>on GaAs(001)-4 ? 6 surface with trimethylaluminum and water as precursors

Huang, M.L.M.L.HuangChang, Y.H.Y.H.ChangLin, T.D.T.D.LinLin, H.Y.H.Y.LinLiu, Y.T.Y.T.LiuPi, T.W.T.W.PiMINGHWEI HONGKwo, J.J.Kwo2019-12-272019-12-272012https://scholars.lib.ntu.edu.tw/handle/123456789/443342Growth mechanism of atomic layer deposited Al<inf>2</inf>O<inf>3</inf>on GaAs(001)-4 ? 6 surface with trimethylaluminum and water as precursorsjournal article10.1063/1.47671292-s2.0-84870015446https://www.scopus.com/inward/record.uri?eid=2-s2.0-84870015446&doi=10.1063%2f1.4767129&partnerID=40&md5=b3d667d8673df6746d3abf1c1969cf0b