Cheng H.-Y.Ma J.-S.Lu C.-H.2019-05-132019-05-13201209258388https://scholars.lib.ntu.edu.tw/handle/123456789/407392Cd(S,Se) thin films were successfully synthesized on the glass substrates via the CBD method followed by selenization. Cd(S,Se) compounds were formed when the selenization temperature exceeded 325 ¢XC. XRD analysis reveals that the prepared films had a cubic structure. The contents of selenium ions in Cd(S,Se) films were increased with increasing reaction temperatures and duration. The band gap of Cd(S,Se) films was controlled between 2.28-1.77 eV by adjusting the selenium-ion contents. All of the synthesized films exhibited n-type characteristics, as determined from Hall effect measurement. The carrier concentration and the conductivity of CdS films were significantly promoted with the selenization process. ? 2012 Elsevier B.V. All rights reserved.CdSCdSeSelenizationThin filmsjournal article10.1016/j.jallcom.2012.07.0042-s2.0-84865816427https://www.scopus.com/inward/record.uri?eid=2-s2.0-84865816427&doi=10.1016%2fj.jallcom.2012.07.004&partnerID=40&md5=f73fbaeb194ea41aa960835590fc04ac