Ultralow leakage In <inf>0.53</inf> Ga <inf>0.47</inf> As p-i-n photodetector grown on linearly graded metamorphic In <inf>x</inf> Ga <inf>1-x</inf> P buffered GaAs substrate

Lin, G.-R.G.-R.LinKuo, H.-C.H.-C.KuoLin, C.-K.C.-K.LinGONG-RU LIN2020-06-112020-06-112005https://scholars.lib.ntu.edu.tw/handle/123456789/500181Ultralow leakage In <inf>0.53</inf> Ga <inf>0.47</inf> As p-i-n photodetector grown on linearly graded metamorphic In <inf>x</inf> Ga <inf>1-x</inf> P buffered GaAs substratejournal article10.1109/JQE.2005.8475702-s2.0-20544445461https://www.scopus.com/inward/record.uri?eid=2-s2.0-20544445461&doi=10.1109%2fJQE.2005.847570&partnerID=40&md5=02308925322980a822aa3fac8f7d3929