Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO<inf>2</inf> on In<inf>0.53</inf>Ga<inf>0.47</inf>As

Lee, K.Y.K.Y.LeeLee, Y.J.Y.J.LeeChang, P.P.ChangHuang, M.L.M.L.HuangChang, Y.C.Y.C.ChangMINGHWEI HONGKwo, J.J.Kwo2019-12-272019-12-272008https://scholars.lib.ntu.edu.tw/handle/123456789/443418Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO<inf>2</inf> on In<inf>0.53</inf>Ga<inf>0.47</inf>Asjournal article10.1063/1.29528262-s2.0-46049110934https://www.scopus.com/inward/record.uri?eid=2-s2.0-46049110934&doi=10.1063%2f1.2952826&partnerID=40&md5=efd1a2d71fce8344edc67df1f9a3aca8