Blue light-emitting diode fabrication of an InGaN/GaN epilayer bonded on a Si substrate by laser liftoff

Dept. of Electr. Eng., National Taiwan Univ.Chen, C.C.C.C.ChenHsu, M.C.M.C.HsuHsiao, J.R.J.R.HsiaoYen, J.L.J.L.YenYang, Y.J.Y.J.YangLin, C.H.C.H.LinWang, L.A.L.A.WangLiu, C.C.C.C.Liu2007-04-192018-07-062007-04-192018-07-062001-07http://ntur.lib.ntu.edu.tw//handle/246246/2007041910021361application/pdf84696 bytesapplication/pdfen-USBlue light-emitting diode fabrication of an InGaN/GaN epilayer bonded on a Si substrate by laser liftoffjournal article10.1109/CLEOPR.2001.970796http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910021361/1/00970796.pdf