Stacey, AlastairAlastairStaceyDontschuk, NikolaiNikolaiDontschukJYH PIN CHOUBroadway, David A.David A.BroadwaySchenk, Alex K.Alex K.SchenkSear, Michael J.Michael J.SearTetienne, Jean-PhilippeJean-PhilippeTetienneHoffman, AlonAlonHoffmanPrawer, StevenStevenPrawerPakes, Chris I.Chris I.PakesTadich, AntonAntonTadichde Leon, Nathalie P.Nathalie P.de LeonGali, AdamAdamGaliHollenberg, Lloyd C. L.Lloyd C. L.Hollenberg2024-09-182024-09-182019https://www.scopus.com/record/display.uri?eid=2-s2.0-85057769899&origin=resultslisthttps://scholars.lib.ntu.edu.tw/handle/123456789/721371Article number 1801449Many advanced applications of diamond materials are now being limited by unknown surface defects, including in the fields of high power/frequency electronics and quantum computing and quantum sensing. Of acute interest to diamond researchers worldwide is the loss of quantum coherence in near-surface nitrogen-vacancy (NV) centers and the generation of associated magnetic noise at the diamond surface. Here for the first time is presented the observation of a family of primal diamond surface defects, which is suggested as the leading cause of band-bending and Fermi-pinning phenomena in diamond devices. A combination of density functional theory and synchrotron-based X-ray absorption spectroscopy is used to show that these defects introduce low-lying electronic trap states. The effect of these states is modeled on band-bending into the diamond bulk and it is shown that the properties of the important NV defect centers are affected by these defects. Due to the paramount importance of near-surface NV center properties in a growing number of fields, the density of these defects is further quantified at the surface of a variety of differently-treated device surfaces, consistent with best-practice processing techniques in the literature. The identification and characterization of these defects has wide-ranging implications for diamond devices across many fields. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimdefectsdiamondFermi-level pinningNEXAFSsurfacesjournal article10.1002/admi.2018014492-s2.0-85057769899