2011-08-012024-05-18https://scholars.lib.ntu.edu.tw/handle/123456789/698306摘要：本計畫的研究目標在利用分子束磊晶技術開發低含氮、含銻的三五化合物半導體：GaAsSbN以及InAsSbN。這兩種合金可分別與GaAs、InAs晶格匹配，並具有比GaAs、InAs更小的能隙。在GaAsSbN的研究，我們將著重於使用分子氮電漿源來成長樣品，並與過去使用原子氮電漿源的樣品比較。我們研究低溫退火的效應，以使樣品維持低能隙並降低非輻射中心濃度。我們也將利用退火、接面鈍化、與表面處理等方式改善PN接面的特性。並將此厚層材料應用於長波長的光偵測器以及低導通電壓的異質接面雙極性電晶體。在InAsSbN方面，我們將研究能隙與Sb、N成分的關係，利用能帶交越模型了解材料的能帶結構與不連續。我們也將在InP基板之上成長InAsSbN量子井結構，並利用此結構成長中紅外波長的量子井雷射。<br> Abstract: The aim of this proposal is at the development of two dilute antimony-nitride alloys: GaAsSbN and InAsSbN, which can be lattice-matched to GaAs and InAs substrates in respectively. Because of the bowing effect resulting from N and Sb, the alloys are with an energy gap narrower than that of their lattice-matched substrates. On the proposed works for GaAsSbN, we will focus on the growth using metastable molecular N2* plasma source and the comparison on the structural and optical properties with previous samples that grown using atomic N plasma source. We will continue the study on low temperature annealing to achieve the conditions that can preserve the low energy gap resulting from N pairings and eliminate the nonradiative centers resulting from extreme growth conditions. We will also study the reduction of defect recombination currents in the GaAsSbN PN junction by using thermal annealing, surface passivation, intermediate layer, and ledge structures. Finally, long wavelength photodetectors and heterojunction bipolar transistor with low turn-on voltage will investigated. In the respective of InAsSbN, we will study the dependence of energy gap on the compositions of Sb and N, to understand the energy band structure and the band offsets. We will investigate the growth of InAsSbN/InGaAs quantum wells on InP substrates and fabricate mid-infrared laser diodes using these quantum wells.氮砷銻化鎵氮砷銻化銦分子束磊晶成長量子井光偵測器雷射二極體異質接面電晶體GaAsSbNInAsSbNMBEquantum wellphotodetectorlaser diodeheterojunction bipolar transistor