Studies of boron diffusivities on (001) and (110) substrate orientation in Si and Ge along vertical/out-of plane and lateral/in-plane directions by SIMS and C-V measurement on the designed test pattern

M.-H. LiaoMING-HAN LIAO2021-12-302021-12-302012https://scholars.lib.ntu.edu.tw/handle/123456789/590716SingaporeStudies of boron diffusivities on (001) and (110) substrate orientation in Si and Ge along vertical/out-of plane and lateral/in-plane directions by SIMS and C-V measurement on the designed test patternconference paper