2010-01-012024-05-18https://scholars.lib.ntu.edu.tw/handle/123456789/712111摘要：本計畫將利用鈣鋁酸鹽玻璃取代一般熱電元件(歐亞研發科技公司，ORRA，生產提供)的高溫熱板，並在鈣鋁酸鹽玻璃背面成長絕緣及熱吸收好的高電阻釹鍶錳氧薄膜(Nd&not;0.2Sr0.8MnO3 thin film, NSMO)。我們將量測不同NSMO成長條件與厚度下之光(含紅外線頻段)穿透與反射光譜，以及其對應之輸出功率p與轉換效率Eta改變，另對於不同之金屬/半導體接面電阻對應之p與Eta改變，輔以理論分析研究，亦可獲得最佳之封裝條件。預期在最佳化條件下，可增加熱電元件數個百分比以上的轉換效率輸出。<br> Abstract: In this study, high-absorption insulating Nd&not;0.2Sr0.8MnO3 (NSMO) thin films will be grown on CaAlO&not;3 glass substrates using rf sputter to replace the hot plates commonly used in the thermoelectric devices (products of ORRA company). We will measure the spectra of reflection and transmittance for NSMO films with different thicknesses and growth conditions, and the corresponding output powers p or transfer coefficients Eta of the thermoelectric devices. We also measure the output powers and transfer coefficients of the thermoelectric devices with different metal/semiconductor interface resistance. The results will be theoretically analyzed to achieve the optimum fabrication for package of thermoelectric devices. It is predicted that several-percent increase of the transfer coefficient can be obtain using these optimum processes.熱電元件轉換效率釹鍶錳氧薄膜金屬/半導體接面射頻濺鍍thermoelectric devicestransfer coefficientNd0.2Sr0.8MnO3 thin filmmetal/semiconductor interfacerf sputter