High-mobility GeSn n-channel MOSFETs by low-temperature chemical vapor deposition and microwave annealing

Tzu-Hung LiuYen ChuangPo-Yuan ChiuChia-You LiuCheng-Hong ShenGuang-Li LouJiun-Yun LiJIUN-YUN LI李峻霣2019-10-242019-10-2420187413106https://scholars.lib.ntu.edu.tw/handle/123456789/428010High-mobility GeSn n-channel MOSFETs by low-temperature chemical vapor deposition and microwave annealingjournal article10.1109/led.2018.28081672-s2.0-85042373986