臺灣大學: 電子工程學研究所胡振國楊朝舜Yang, Chao-ShunChao-ShunYang2013-04-102018-07-102013-04-102018-07-102012http://ntur.lib.ntu.edu.tw//handle/246246/256728因為半導體技術持續的在進步，以及摩爾定律的存在，所以元件的尺寸不斷的在縮小，然而，微縮終究有其極限的存在，為了使尺寸微縮能夠繼續下去，非平面結構出現了。由於結構上的不同，因此非平面元件與平面元件的電特性並不相同，而探討非平面元件的電特性成為一個重要的課題。在本文中，我們可以發現非平面結構的均勻性比平面元件差，在界面陷阱密度的計算中，我們可以發現由於非平面結構的側壁以及角落的不同晶格方向，使得非平面結構出現了額外的界面陷阱，而根據我們的模型可得知大面積元件的均勻性比小面積元件差。 在量測電壓與電流的關係時，我們知道反轉區電流主要是由少數載子產生-復合所主導，而少數載子產生-復合電流與溫度有高度的相關性，因此我們藉由變溫的量測來探討非平面和平面元件的電流導通機制。由於非平面元件的均勻性比較差，使基板注入電流效應提早在比較小的閘極電壓下發生。然而，隨著閘極電壓的加大，跟非平面元件相比，平面元件在空乏區時的閘極注入電流呈現了較高的溫度敏感度。最後，我們由電壓-電流曲線可以觀察到，平面元件的反轉區電流會飽和，然而，非平面元件的反轉區電流卻不會飽和，這個現象也與元件的均勻性有關，再次驗證了元件均勻度的重要性。Because of the development of process technology of semiconductor and the existence of the Moore， law, the size of device is scaling down continuously. However, shrinking eventually encounters the limit. In order to make the size shrinking continue, non-planar structure was proposed. Due to the difference of structures, the electrical characteristics of non-planar structures are different for planar, and the exploring of the electrical characteristics of non-planar devices becomes an important issue. In this work, it was found that the uniformity of non-planar devices is worse than planar ones. According to the calculation of the interface trap density, additional interface traps due to the side walls and corners of non-planar devices were observed. In addition, we find the uniformity of large devices is worse than small ones. When measuring current density-voltage (J-V) characteristics, we know that the inversion current is mainly dominated by minority carrier generation-recombination current, which is strongly dependent on temperature. So we investigate the current conduction mechanism with various temperature measurements of non-planar and planar devices. Finally, it was observed that the inversion current of planar devices will saturate, however, the inversion current of the non-planar devices will not. This phenomenon is also related to the uniformity of devices. It is of importance to study the uniformity of devices.2816723 bytesapplication/pdfen-US二氧化矽電容電壓曲線不均勻SiO2C-V curvenonuniformitythesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/256728/1/ntu-101-R99943103-1.pdf