The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effect

Liao, M.-H.M.-H.LiaoHuang, H.-Y.H.-Y.HuangTsai, F.-A.F.-A.TsaiChuang, C.-C.C.-C.ChuangHsu, M.-H.M.-H.HsuLee, C.-C.C.-C.LeeLee, M.-H.M.-H.LeeLien, C.C.LienHsieh, C.-F.C.-F.HsiehWu, T.-C.T.-C.WuWu, H.-S.H.-S.WuYao, C.-W.C.-W.YaoMING-HAN LIAO2020-01-132020-01-132017https://scholars.lib.ntu.edu.tw/handle/123456789/447949[SDGs]SDG7The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effectjournal article10.1016/j.vacuum.2016.07.0242-s2.0-84979713705https://www.scopus.com/inward/record.uri?eid=2-s2.0-84979713705&doi=10.1016%2fj.vacuum.2016.07.024&partnerID=40&md5=8321db8755484c54acde1caff80ce868