Chang, Y.-C.Y.-C.ChangLiu, E.-S.E.-S.LiuKuo, H.-C.H.-C.KuoGONG-RU LINChang, Ya-ChungYa-ChungChang2020-06-112020-06-112007https://www.scopus.com/inward/record.uri?eid=2-s2.0-34247897259&doi=10.1063%2f1.2736281&partnerID=40&md5=2f0816b11d3e675ae192d2150b529240Low refractive index of a stalagmitelike high-aspect-ratio Si nanopillar array on Si dry etched using a self-aggregated Ni nanodot mask is demonstrated, which exhibits two minimum reflectances of 1.23 and 1.4 with corresponding refractive indices of 1.25 and 1.48 at 400 and 1200 nm, respectively. Angular dependency of the transverse electrical mode reflectance at 632.8 nm of the surface roughened Si nanopillar array is released, and the Brewster angle of 63° with equivalent refractive index of 1.5 is determined. © 2007 American Institute of Physics.Aspect ratio; Light reflection; Nanocrystalline silicon; Refractive index; Surface roughness; Electrical mode reflectance; Nanodots; Nanopillar arrays; Nanostructuresjournal article10.1063/1.27362812-s2.0-34247897259