Chia-Ying SuWei-Han ChenYang KuoChun-Han LinMing-Yen SuMeng-Che TsaiWen-Yen ChangChieh HsiehCharng-Gan TuYu-Feng YaoHao-Tsung ChenYEAN-WOEI KIANG2019-10-312019-10-31201815571955https://scholars.lib.ntu.edu.tw/handle/123456789/429718https://www.scopus.com/inward/record.uri?eid=2-s2.0-85017578250&doi=10.1007%2fs11468-017-0582-5&partnerID=40&md5=0476fb422911f7670235240a325aec99The enhancement of the internal quantum efficiency (IQE) of deep-ultraviolet AlxGa1-xN/AlyGa1-yN (x < y) quantum wells (QWs) by fabricating one-dimensional Al nanogratings on a QW structure for inducing surface plasmon (SP) coupling is demonstrated. Through temperature-dependent photoluminescence (PL) measurement, the enhancements of IQE in different emission polarizations are illustrated. Due to the small difference in energy band level between the heavy/light hole and split-off valence bands, the IQEs of the transverse electric- (TE-) and transverse magnetic- (TM-) polarized emissions are about the same. When emission polarization is perpendicular to Al-grating ridges, the SP resonance mode for coupling with the QWs is dominated by localized surface plasmon (LSP). When emission polarization is parallel with Al-grating ridges, the coupled SP resonance mode may mix LSP and SP polariton. In this polarization, LSP can be excited because of the width fluctuation of a grating ridge. When the excitation laser polarization is perpendicular to Al-grating ridges, the strong LSP resonance at the excitation laser wavelength leads to stronger excitation and hence higher IQE levels. © 2017, Springer Science+Business Media New York.Deep ultraviolet; Internal quantum efficiency; Light-emitting diode; Localized surface plasmon; Surface plasmon resonance[SDGs]SDG7journal article10.1007/s11468-017-0582-52-s2.0-85017578250