Optimum design of silicon doping for emission enhancement of InGaN/GaN quantum well light-emitting devices

Graduate Inst. of Electro-Opt. Eng., National Taiwan Univ.Cheng, Yung-ChenYung-ChenChengLin, En-ChiangEn-ChiangLinChen, Meng-KuoMeng-KuoChenWu, Cheng-MingCheng-MingWuYang, C.C.C.C.YangMa, Kung-JenKung-JenMa2007-04-192018-07-052007-04-192018-07-052004N/Ahttp://ntur.lib.ntu.edu.tw//handle/246246/2007041910042826application/pdf180606 bytesapplication/pdfen-USOptimum design of silicon doping for emission enhancement of InGaN/GaN quantum well light-emitting devicesjournal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910042826/1/01361822.pdf