Po-Ching HsuShiao-Po TsaiChing-Hsiang ChangChao-Jui HsuWEI-CHUNG CHENGHsing-Hung HsiehCHUNG-CHIH WU2019-10-242019-10-242015https://scholars.lib.ntu.edu.tw/handle/123456789/427851https://www.scopus.com/inward/record.uri?eid=2-s2.0-84933046758&doi=10.1016%2fj.tsf.2015.04.034&partnerID=40&md5=8e05b6e093c9edf34a5dbd3794c8d2baIn this work, we have investigated sputtering deposition of p-type SnO using the robust Sn/SnO2 mixed target in a hydrogen-containing atmosphere. The effects of the hydrogen-containing sputtering gas on structures, compositions, and electrical properties of deposited SnOX films were studied. While the SnO2/SnO mixed phase was generally obtained by sputteringwith the Sn/SnO2 mixed target in the pure Ar atmosphere, rather pure polycrystalline SnO films with single preferential orientation could be readily obtained by introducing an appropriate amount of hydrogen into the sputtering gas and by appropriate post-annealing (e.g., 300 °C). SnO films thus obtained exhibited a p-type Hall mobility of up to ∼2 cm2 V-1 s-1 and p-type SnO thin-film transistors using such SnO films were also demonstrated, showing a field-effect mobility of up to 1.16 cm2 V-1 s-1. © 2015 Elsevier B.V. All rights reserved.Oxide semiconductor; P-type; Sputtering; Thin film transistor; Tin oxideAnnealing; Field effect transistors; Hall mobility; Hydrogen; Semiconducting organic compounds; Sputtering; Thin film transistors; Thin films; Tin; Tin oxides; Transistors; Film preparation; Field-effect mobilities; Oxide semiconductor; P-type; Polycrystalline; Post annealing; Preferential orientation; Sputtering deposition; Sputtering gas; Film preparation; Thin filmsjournal article10.1016/j.tsf.2015.04.0342-s2.0-84933046758