Suppression of short channel effects in FinFETs using crystalline ZrO<inf>2</inf> high-K/Al<inf>2</inf>O<inf>3</inf> buffer layer gate stack for low power device applications

Tsai, M.-C.M.-C.TsaiWang, C.-I.C.-I.WangChen, Y.-C.Y.-C.ChenChen, Y.-J.Y.-J.ChenLi, K.-S.K.-S.LiChen, M.-C.M.-C.ChenChen, M.-J.M.-J.ChenMIIN-JANG CHEN2020-05-122020-05-122018https://scholars.lib.ntu.edu.tw/handle/123456789/491721[SDGs]SDG7Suppression of short channel effects in FinFETs using crystalline ZrO<inf>2</inf> high-K/Al<inf>2</inf>O<inf>3</inf> buffer layer gate stack for low power device applicationsjournal article10.1088/1361-6641/aaab012-s2.0-85043477900https://www.scopus.com/inward/record.uri?eid=2-s2.0-85043477900&doi=10.1088%2f1361-6641%2faaab01&partnerID=40&md5=8926d17b7a5513eef06034ce0604fa4e