Compact current model for mesa-isolated fully-depleted ultrathin SOI NMOS devices considering sidewall-related narrow channel effects

Dept. of Electr. Eng., National Taiwan Univ.Kuo, J.B.J.B.KuoSu, K.W.K.W.SuKuoJB2007-04-192018-07-062007-04-192018-07-061997-10http://ntur.lib.ntu.edu.tw//handle/246246/2007041910031890application/pdf214945 bytesapplication/pdfen-USCompact current model for mesa-isolated fully-depleted ultrathin SOI NMOS devices considering sidewall-related narrow channel effectsjournal article10.1109/SOI.1997.634944http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910031890/1/00634944.pdf