Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices

Chu, L.K.L.K.ChuLin, T.D.T.D.LinHuang, M.L.M.L.HuangChu, R.L.R.L.ChuChang, C.C.C.C.ChangKwo, J.J.KwoMINGHWEI HONG2019-12-272019-12-272009https://scholars.lib.ntu.edu.tw/handle/123456789/443401Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devicesjournal article10.1063/1.31397722-s2.0-65949104293https://www.scopus.com/inward/record.uri?eid=2-s2.0-65949104293&doi=10.1063%2f1.3139772&partnerID=40&md5=ffce08f0b618b7760d4ae7892eea224c