電機資訊學院: 電子工程學研究所指導教授: 李嗣涔盧思安Lu, Szu-AnSzu-AnLu2017-03-062018-07-102017-03-062018-07-102016http://ntur.lib.ntu.edu.tw//handle/246246/276445現有記憶體科技將難以滿足未來對於高效能記憶體的需求，在多種發展中的次世代記憶體中，電橋式記憶體擁有達成未來需求的潛力。其作為一種電阻式記憶體，在各式不同的材料組合之中，Ag/Ta2O5/Pt擁有低操作電壓(<0.3 V)、低功耗(<20 μJ 每次寫入-抹除)以及高開關比(10^7)。為了進一步改善其在耐久性和均勻性上的問題，利用直接沉積而非熱退火生成的方法，在Ta2O5記憶層中嵌入一層銀奈米粒子。改善後，寫入電壓能夠降低37%、其標準差也降低了42%、耐久性更提升了100%以上。研究在Ta2O5中嵌入奈米粒子的電橋式記憶體，發現這樣的記憶體有良好的記憶體特性，以及可供未來繼續發展的潛力。Conductive bridge random access memory (CBRAM), as a kind of resistive random access memory (RRAM), is one of the promising emerging memory technologies to meet the challenges of developing the next-generation high performance semiconductor memory. Among many material combinations, Ag/Ta2O5/Pt has the advantages of low operation voltage (<0.3 V), low power consumption (<20 μJ per cycle), and large on-off ratio (10^7). To improve the endurance and the uniformity issues, the Ag nanoparticles, fabricated by one-step annealing-free deposition, were embedded in the Ta2O5 memory layers. The SET voltage and its standard deviation were reduced by 37% and 42% respectively, and the endurance was increased at least 100%. The nanoparticle-embedded Ta2O5 CBRAM devices were proposed and studied, which have the promising memory characteristics and the potential for the further researches.11040917 bytesapplication/pdf論文公開時間: 2016/3/8論文使用權限: 同意有償授權(權利金給回饋學校)五氧化二鉭銀奈米粒子電橋式記憶體電阻式記憶體射頻磁控濺鍍tantalum pentoxide (Ta2O5)silver nanoparticlesconductive bridge random access memory (CBRAM)resistive random access memory (RRAM)RF magnetron sputteringthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/276445/1/ntu-105-R02943173-1.pdf