Wu, Bing ChenBing ChenWuWEI-TING CHENTSUNG-TE LIU2023-09-012023-09-012023-01-0100189200https://scholars.lib.ntu.edu.tw/handle/123456789/634887This article presents an energy-efficient microprocessor design that fully integrates an error-resilient RISC-V core and an embedded dc–dc switched-capacitor voltage regulator (SCVR). The proposed design achieves high energy efficiency, high computation performance, and a small system footprint through several innovations. First, in situ error detection and correction (EDAC) flip-flops (FFs) and an error-resilient static random access memory (SRAM) interfacing technique enable error resilience on the microprocessor without any post-silicon calibration requirement. Next, a fully integrated SCVR featuring a multi-rate successive approximation (MRSA) algorithm and a dynamic conduction loss minimization technique is proposed to achieve high conversion efficiency, high-power density, and fast load regulation. A prototype chip that fully integrates the techniques described above was fabricated in the 28-nm standard CMOS technology with an active area of 0.42 mm<inline-formula> <tex-math notation="LaTeX">$^{2}$</tex-math> </inline-formula>. The measurement results show that the proposed in situ EDAC effectively minimizes the timing margin without any post-silicon calibration to achieve a high-processor performance of 43 MHz with an energy-delay-product (EDP) of 0.57 <inline-formula> <tex-math notation="LaTeX">$\text{pJ}\cdot\mu$</tex-math> </inline-formula>s, showing the state-of-the-art performance and energy efficiency in the standard CMOS technology.Energy efficiency | Error detection and correction (EDAC) | error resilience | fully integrated dc–dc voltage converter | high energy efficiency | microprocessor | Microprocessors | near-threshold voltage (NTV) | Random access memory | Regulation | Regulators | RISC-V | sub-threshold voltage | Timing | Voltage control | voltage regulator[SDGs]SDG3[SDGs]SDG7An Error-Resilient RISC-V Microprocessor With a Fully Integrated DC–DC Voltage Regulator for Near-Threshold Operation in 28-nm CMOSjournal article10.1109/JSSC.2023.32873602-s2.0-85164411461https://api.elsevier.com/content/abstract/scopus_id/85164411461