Advances in high 庥 gate dielectrics for Si and III-V semiconductors

Kwo, J.J.KwoMINGHWEI HONGBusch, B.B.BuschMuller, D.A.D.A.MullerChabal, Y.J.Y.J.ChabalKortan, A.R.A.R.KortanMannaerts, J.P.J.P.MannaertsYang, B.B.YangYe, P.P.YeGossmann, H.H.GossmannSergent, A.M.A.M.SergentNg, K.K.K.K.NgBude, J.J.BudeSchulte, W.H.W.H.SchulteGarfunkel, E.E.GarfunkelGustafsson, T.T.Gustafsson2019-12-272019-12-27200310.1016/S0022-0248(02)02192-9https://scholars.lib.ntu.edu.tw/handle/123456789/443468Advances in high 庥 gate dielectrics for Si and III-V semiconductorsconference paper2-s2.0-0037382841https://www.scopus.com/inward/record.uri?eid=2-s2.0-0037382841&doi=10.1016%2fS0022-0248%2802%2902192-9&partnerID=40&md5=72ffc4ff695eee1fbab29d10b01c5aa0