Feng, Shih-WeiShih-WeiFengCheng, Yung-ChenYung-ChenChengChung, Yi-YinYi-YinChungCHIH-WEN LIUMING-HUA MAOCHIH-CHUNG YANGLin, Yen-ShengYen-ShengLinMa, Kung-JengKung-JengMaChyi, Jen-InnJen-InnChyi2009-03-182018-07-062009-03-182018-07-0620020277786Xhttp://ntur.lib.ntu.edu.tw//handle/246246/145983https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036029035&doi=10.1117%2f12.470417&partnerID=40&md5=09306011472130ef2d92204ffc4af4e4We report the fast and slow decay lifetimes of multi-component photoluminescence (PL) intensity decays in the time-resolved photoluminescence measurements at the room temperature and a low temperature (12K). The fast decay component was essentially due to carrier dynamics, that is, carrier transport from weakly localized to localized states. Such a carrier transport process results in extremely long PL decay time (up to almost 120 ns) for strongly localized states at the low temperature. At room temperature, because of thermal energy and hence carrier escape from strongly localized states, effective lifetimes becomes shorter. © 2002 SPIE · 0277-786X/02/$15.00.application/pdf110089 bytesapplication/pdfen-USCarrier dynamics; Carrier transport; InGaN/GaN quantum well; Localized statesGallium nitride; Low temperature operations; Optical variables measurement; Photoluminescence; Photons; Relaxation processes; Semiconducting indium compounds; Semiconductor quantum wells; Carrier dynamics; Carrier relaxation; Carrier transport; Localized states; Carrier mobilityjournal article10.1117/12.4465462-s2.0-0036029035http://ntur.lib.ntu.edu.tw/bitstream/246246/145983/1/03.pdf