Chen K.H.Chen L.C.LI-CHYONG CHEN2022-08-092022-08-09199602729172https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030398933&doi=10.1557%2fproc-423-377&partnerID=40&md5=f5e73332821bb40da51b96bd9810f815https://scholars.lib.ntu.edu.tw/handle/123456789/616461A new approach toward GaN growth using electron cyclotron resonance assisted microwave plasma enhanced chemical vapor deposition (ECR-CVD) method has been implemented. This growth technique allows for low- as well as high-temperature deposition, the use of pure nitrogen source, and a wide operating pressure that is between MOCVD and MOMBE. The unique features of this technique enable the growth of the epitaxial layer of GaN on a variety of substrates including sapphire, silicon, and LiGaO2. SEM, XRD, Raman, photoluminescence (PL), and Hall measurement are employed to characterize the deposited films. Highly oriented, (0001) textured films in the expected wurtzite structure with blue emission have been obtained.Chemical vapor deposition;Electron cyclotron resonance;Film growth;Nitrides;Nitrogen;Photoluminescence;Plasma applications;Raman spectroscopy;Scanning electron microscopy;Semiconducting gallium compounds;Semiconductor growth;X ray diffraction analysis;Epitaxial layers;Hall measurements;Plasma enhanced chemical vapor deposition;Wurtzite structures;Semiconducting filmsconference paper10.1557/proc-423-3772-s2.0-0030398933