GaN on Si RF performance with different AlGaN back barrier

Hsieh, Chang YanChang YanHsiehChen, Hui YuHui YuChenTu, Po TsungPo TsungTuChen, Jui ChinJui ChinChenYang, Hsin YunHsin YunYangYeh, Po ChunPo ChunYehHsieh, DeDeHsiehLiu, Hsueh HsingHsueh HsingLiuFu, Yi KengYi KengFuSheu, Shyh ShyuanShyh ShyuanSheuKuo, Hao ChungHao ChungKuoYUH-RENN WULo, Wei ChungWei ChungLoChang, Shih ChiehShih ChiehChang2023-08-072023-08-072023-01-019798350334166https://scholars.lib.ntu.edu.tw/handle/123456789/634450In this paper, the DC and RF device performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) with different AlGaN back barrier thickness has been studied. The test results of the HEMTs with 50 nm back barrier exhibit Idssat=640 mA mm gm=405 mS mm, and on/off ratio = 1.5 E+04. In small-signal operation, cut-off frequency FT FMAX=59/127 GHz are achieved, which gives a high value of ( FT × Lg)=14.7 GHz ×μ m among the reported GaN-on-Si devices.GaN on Si RF performance with different AlGaN back barrierconference paper10.1109/VLSI-TSA/VLSI-DAT57221.2023.101340892-s2.0-85163013946https://api.elsevier.com/content/abstract/scopus_id/85163013946