指導教授：劉深淵臺灣大學：電子工程學研究所江侑軒Chiang, Yu-HsuanYu-HsuanChiang2014-11-302018-07-102014-11-302018-07-102014http://ntur.lib.ntu.edu.tw//handle/246246/263855這篇論文的主題主要分為兩個部分，第一個部分是設計一個低於微瓦且低溫度係數的弛張振盪器，此電路運用電晶體工作在次臨界區，電流模式的比較器以及汲取電流式反向器來減少消耗的功率。且汲取電流式反向器是利用跟絕對溫度成正比以及跟絕對溫度成反比的電流源相加來減少其對溫度的變異。利用電阻的串並聯和跟絕對溫度成正比以及跟絕對溫度成反比的電流源來更進一步的降低溫度係數。量測的平均溫度係數為64.3ppm/°C，功率優值為0.78nW/kHz。 第二部分利用不同閘極氧化層厚度的電晶體來實做低溫度係數的電流源和曲度電流源使得振盪器有低溫度係數。在0.18-μm CMOS的製程中，完成了振盪頻率為1.4M赫茲和28k赫茲的振盪器。1.4M赫茲的振盪器中，在1.2伏特的供給電壓下，消耗功率為615nW，在-20~80°C平均的量測溫度係數為56.4ppm/°C 計算的第一優值和第二優值分別為124dB 和 103dB。28k赫茲的振盪器中，在1.2伏特的供給電壓下，消耗功率為40.2nW，在-20~80°C平均的量測溫度係數為95.5ppm/°C 計算的第一優值和第二優值分別為119dB 和 92dB。This thesis consists of two parts. The first part aims to design a submicrowatts and low temperature coefficient (TC) relaxation oscillator. In this oscillator, the transistors in the subthreshold region, the current-mode comparator, and the current-starving inverters are used to reduce the power of the relaxation oscillator. The current-starving inverters are biased by using the PTAT and CTAT current sources to release the temperature variations. The parallel/series composite resistor and the PTAT/CTAT current sources are also used to further reduce the temperature coefficient. The average temperature coefficient is 64.3ppm/°C for the temperature of -20~80°C, and the calculated power FOM is 0.78nW/kHz. The second part implements the low TC current reference and curvature current source with different gate-oxide thickness mosfets to realize the oscillators with low TCs. Two oscillators of 1.4MHz and 28kHz are fabricated in a 0.18-μm CMOS process. For the 1.4MHz oscillator, its power is 615nW with a supply voltage of 1.2V. The measured average TC is 56.4ppm/°C for the temperature of -20~80°C. The calculated FOM1 and FOM2 are 124dB and 103dB, respectively. For the 28kHz oscillator, its power is 40.2nW with a supply voltage of 1.2V. The measured average TC is 95.5ppm/°C for the temperature of -20~80°C. The calculated FOM1 and FOM2 are 119dB and 92dB, respectively.1. Introduction………………………………………………………… 1 1.1 On-chip Oscillators…….……………………………………. 1 1.2 Overview…………………………………………………….. 2 2. A Submicrowatts 1.1MHz CMOS Relaxation Oscillator with Temperature Compensation………………………….. 4 2.1 Motivation…………………………………………………… 4 2.2 Circuit Architecture………………………………………….. 5 2.2.1 Overview of the Approach…………………………... 5 2.2.2 PTAT Current Reference…………………………….. 6 2.2.3 CTAT Current Reference.……………………………. 8 2.2.4 Oscillators…………………………………………..... 10 2.2.5 Resistors……………………………………………... 12 2.2.6 Clock Buffer…………………………………………. 15 2.3 Experimental Results………………………………………… 17 2.3.1 Measurement Results………………………………... 17 2.3.2 Die Photo and Performance Summary……………..... 19 2.4 Conclusion……………………….…….…….…….……...…. 21 3. Nanopower CMOS Relaxation Oscillators with Sub-100ppm/°C Temperature Coefficient……………………………… 22 3.1 Motivation…………………………………………………… 22 3.2 Circuit Architecture…………………………………….……. 23 3.2.1 Overview of the Approach…………………….…….. 23 3.2.2 Low TC Current Reference………………….………. 24 3.2.3 Curvature Current Source…………………...………. 27 3.2.4 A 1.4MHz Oscillator………………………………… 29 3.2.5 A 28kHz Oscillator………………………………….. 33 3.3 Experimental Results………………………………………… 35 3.3.1 Measurement Results………………………………... 35 3.3.2 Die Photo and Performance Summary……………..... 37 3.4 Conclusion……………………….…….…….…….……...…. 40 4. Conclusion and Future Work……………………………………… 41 4.1 Conclusion…………………………………………………… 41 4.2 Future Work…………………………………………………. 42 Bibliography ……………………………………………………………… 433443831 bytesapplication/pdf論文公開時間：2024/02/06論文使用權限：同意有償授權(權利金給回饋學校)低功耗振盪器溫度補償thesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/263855/1/ntu-103-R00943132-1.pdf