Shallow trench isolation geometric influence of a recessed surface on array-type arrangements of nano-scaled devices strained by contact etch stop liner and Ge-based stressors

Hsieh, C.-P.C.-P.HsiehLiao, M.-H.M.-H.LiaoLee, C.-C.C.-C.LeeCheng, T.-C.T.-C.ChengWang, C.-P.C.-P.WangHuang, P.-C.P.-C.HuangCheng, S.-W.S.-W.ChengMING-HAN LIAO2020-01-132020-01-132016https://scholars.lib.ntu.edu.tw/handle/123456789/447953[SDGs]SDG9Shallow trench isolation geometric influence of a recessed surface on array-type arrangements of nano-scaled devices strained by contact etch stop liner and Ge-based stressorsjournal article10.1016/j.tsf.2016.03.0152-s2.0-84961226283https://www.scopus.com/inward/record.uri?eid=2-s2.0-84961226283&doi=10.1016%2fj.tsf.2016.03.015&partnerID=40&md5=d188bc06b92a8b4a42e99e5847db84f0