楊哲人臺灣大學：材料科學與工程學研究所劉祐銜Iu-Hsien, LiuLiuIu-Hsien2007-11-262018-06-282007-11-262018-06-282007http://ntur.lib.ntu.edu.tw//handle/246246/55300本研究乃是運用射頻磁控濺鍍系統，將欲成長的兩種保護性硬魔之薄膜結構：碳化鎢及矽基板 -氮化鋁鈦，以及碳化鎢及矽基板-氮化鋁（中介層）-氮化鋁鈦，以反應性濺鍍的方式成長。相對於真空電弧鍍膜，射頻磁控濺鍍的優點在於擁有較佳的表面平整度，且可精確控制薄膜厚度，有較一致性的披覆效果，且對於基板有較佳的附著性。 氮化鋁鈦的鋁濃度範圍為不小於70%。在這兩種薄膜結構成長完成之後，施予不同溫度下的真空退火處理，使其產生相變化。而在退火前後的硬度、附著力、表面粗糙度等則分別藉由奈米硬度機、刮痕試驗機、原子力顯微鏡量測之。 構橫切面電子顯微鏡術可以詳細的研究整個薄膜的微結構的轉變以及介面接合區，本研究以高解析電子顯微鏡詳細研究薄膜結構的變化，並將觀察結果連結到機械性質。In this investigation, the two different hard protective thin film structures: TiAlN/Si&WC and TiAlN/AlN/Si&WC are deposited by RF sputtering system. The advantages of sputtering system is lower surface roughness, higher adhesion and more precise in film thickness than that of arc deposition system. The concentration of aluminum is no less than 70%. After depositing these two different film structures, these samples will be annealed at different temperature in vacuum. The mechanical properties of these films such as hardness, adhesion, surface roughness are measured by nano-indentation, scratch test and atomic force microscopy respectively. XTEM (cross-section transmission electron microscopy) can study the evolution of the microstructure and the interface regions of the films precisely. In this study, the evolution of the microstructure and the interface regions will be investigated by high- resolution transmission electron microscopy (HRTEM), and the result will be related to the mechanical properties.Contents 論文口試委員審定書 i 誌謝 ii 中文摘要 iii Abstract iv 圖目錄 viii 表目錄 xiv Chapter 1 Introduction 1 Chapter 2 Research background 9 2-1 Plasma 9 2-2 Sputtering 11 2-2-1 DC Sputtering 11 2-2-2 RF Sputtering 12 2-2-3 Reactive Sputtering 13 2-2-4 Magnetron Sputtering 14 2-2-5 Substrate Bias Voltage Effect 15 2-3 Mechanism of Nucleation and Growth of Film 17 2-4 Microstructure of Film 20 2-5 Crystal Structure of TiAlN 22 2-6 Spinodal Decomposition 23 Chapter 3 Experiment 37 3-1 Experiment Procedures 37 3-2 Material Selections 38 3-3 Substrate Pretreatment 38 3-4 Facility of Sputtering 39 3-5 Sputtering Processes and Parameters 39 3-6 Heat Treatments 40 3-7 Microstructure Analysis 41 3-7-1 AFM 41 3-7-2 TEM 41 3-8 Chemical Composition Analysis 45 3-9 Mechanical Properties Test 45 3-9-1 Nano-Hardness Test 45 3-9-2 Adhesion Test 48 Chapter 4 Analyses of the nano-structure TixAl1-xN films 59 4-1 TixAl1-xN mono layer / Silicon substrate 59 4-1-1 Chemical analysis 59 4-1-1-1 EPMA 59 4-1-1-2 EDS(TEM) 59 4-1-2 Microstructure analysis 60 4-1-2-1 TEM 60 4-1-2-1-1 Overview 60 4-1-2-1-2 Column crystals 61 4-1-2-1-3 Interfaces 63 4-1-2-2 AFM 64 4-1-3 Mechanical properties analysis 65 4-1-3-1 Hardness 65 4-1-3-2 Scratch 65 4-2 TixAl1-xN / AlN buffer layer / Silicon substrate 66 4-2-1 Chemical analysis 66 4-2-1-1 EDS(TEM) 66 4-2-2 Microstructure analysis 66 4-2-2-1 TEM 66 4-2-2-1-1 Overview 66 4-2-2-1-2 Column crystals 67 4-2-2-1-3 Interfaces 67 4-2-2-3 AFM 69 4-2-3 Mechanical properties analysis 69 4-2-3-1 Hardness 69 4-2-3-2 Scratch 69 4-3 Summary 70 Chapter 5 Conclusions 98 Chapter 6 Future works 100 Chapter 7 Appendix 101 References 10318334258 bytesapplication/pdfen-US氮化鋁鈦電子顯微鏡磁控濺鍍奈米硬度原子力顯微鏡TiAlNTEMRF sputteringnano-hardnessAFMthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/55300/1/ntu-96-R94527010-1.pdf