CHEE-WEE LIUChang, H.-L.H.-L.ChangLi, H.-C.H.-C.LiLiu, C.W.C.W.LiuChen, F.F.ChenTsai, M.-J.M.-J.TsaiCHEE-WEE LIU2018-09-102018-09-102011http://www.scopus.com/inward/record.url?eid=2-s2.0-79959919688&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/365226The (anode) TiN/Ti/HfO 2 /TiN (cathode) resistive random access memory (RRAM) has shown yield ~100%. Its simple metal-insulator-metal (MIM) structure exhibits great potential for an embedded BEOL memory compatible with the high-k/metal gate CMOS process. There have been many theories of RRAM physical mechanism in the literature. This paper focuses on HfO 2 -based RRAM and describes a complete physical mechanism from forming, SET/RESET, current conduction, to explanations of various observed phenomena including multilevel, cell size scaling, resistance fluctuation, soft error, and non-abrupt RESRT process. Finally, suggestions for device optimization are given based on the physical model.conference paper10.1109/VTSA.2011.5872253