Chen Y.-TLiang Y.-TCHAO-HSIN WU2023-06-092023-06-092021https://www.scopus.com/inward/record.uri?eid=2-s2.0-85119616210&partnerID=40&md5=ba770c3a0f55aef9a67314f0cb1b475chttps://scholars.lib.ntu.edu.tw/handle/123456789/632226In this paper, we demonstrate an optoelectronic multiplexer circuit using light-emitting transistors (LETs) on a GaAs substrate by a monolithically integrated fabrication process for use in optoelectronic integrated circuits (OEICs). © OSA 2021, © 2021 The Author(s)Gallium arsenide; III-V semiconductors; Monolithic integrated circuits; Multiplexing equipment; Optical fibers; Substrates; Fabrication process; GaAs substrates; Light-emitting transistors; Monolithically integrated; Optoelectronics integrated circuit; Timing circuitsconference paper2-s2.0-85119616210