國立臺灣大學電機工程學系Chiu, Hong-WeiHong-WeiChiuLu, Shey-ShiShey-ShiLu2006-09-272018-07-062006-09-272018-07-062002http://ntur.lib.ntu.edu.tw//handle/246246/20060927122737320573The state-of-the-art iiuise figires of2.17 dB and 3.0 dB at 5 GHr band from monolithic CMOS I,NA’s with 10 mW dissipation on thin (- 20 pin) and Iii)rnial (750pm) substrata are prescntcd. ISxceIlcnt Inpui rctiirn loss ( S I , ) or -41 dB. high of -R.3 dRm and largc llP3 of 0.3 dDin werc also obtaincd. The ehcellenl performance 01 thr 1.NA.s is attributed to the methodology wc developed.application/pdf287925 bytesapplication/pdfzh-TWA 2.17 dB NF, 5 GHz Band Monolithic CMOS LNA with 10 mW DC Power Consumptionthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/20060927122737320573/1/01015091.pdf