Sidewall defect suppression of 620 nm AlGaInP-based red µLED devices using HfO2 ALD passivation

Natchanon PrechatavanichMing-June WuChee-Keong YeeTheeradech SutheebanjerdYi-Tzu TsengYun-Cheng YangChia-An LeeKuan-Heng LinChao-Hsin Wu2025-03-052025-03-052025-01-02https://scholars.lib.ntu.edu.tw/handle/123456789/725459Sidewall defect suppression of 620 nm AlGaInP-based red µLED devices using HfO2 ALD passivationjournal article10.1364/ol.543122