Characterization of Ambient Light Induced Inversion Current in MOS(n) Tunneling Diode with Enhanced Oxide Thickness Dependent Performance

Y.K.LinH.H.LinJ.G.Hwu*JENN-GWO HWU2019-10-312019-10-312016189383https://scholars.lib.ntu.edu.tw/handle/123456789/429063[SDGs]SDG7Characterization of Ambient Light Induced Inversion Current in MOS(n) Tunneling Diode with Enhanced Oxide Thickness Dependent Performancejournal article10.1109/ted.2015.24961522-s2.0-84959465206