(AlxGa1-x)0.5In0.5P/ In0.15Ga0.85As (x=0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications

S. C. YangH. C. ChiuY.-J. ChanH. H. LinJ.-M. KuoHAO-HSIUNG LIN2018-09-102018-09-102001-12http://scholars.lib.ntu.edu.tw/handle/123456789/294270(AlxGa1-x)0.5In0.5P/ In0.15Ga0.85As (x=0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applicationsjournal article