Chen K.-CJENN-GWO HWU2023-06-092023-06-0920221530437Xhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85122880464&doi=10.1109%2fJSEN.2022.3141409&partnerID=40&md5=6ce4984a98afe8e98dd7b11397a6f7eehttps://scholars.lib.ntu.edu.tw/handle/123456789/632456Schottky barrier height modulation (SBHM) mechanism is utilized on metal-insulator-semiconductor tunnel diodes (MISTD) to achieve high photon current gain. The photon current gain can reach over 24000 at 2.5 V for the MISTD with oxide thickness 3.11 nm under photon flux of 1.03times 10{12} cm{-2}sec{-1}. The operation voltage can go down to below 1 V depending on the oxide thickness of MISTD and the requirement of the gain. For example, the MISTD with oxide thickness 2.89 nm can produce photon current gain above 2800 at 1 V under photon flux of 1.03times 10{12} cm{-2}sec{-1}. It is found that the devices can reach an electric field in the order of 10{4}-10{5} V/cm under low operation voltage, which is helpful for high-speed applications. MISTD with gate metal and oxide thickness being properly chosen is simple in structure but effective in photon sensing. © 2001-2012 IEEE.Metal-insulator-semiconductor; photodetector; photodiode; Schottky barrier; tunneling diodeElectric fields; Metal insulator boundaries; MIS devices; Modulation; Photodetectors; Photons; Semiconductor diodes; Semiconductor insulator boundaries; Current gains; Metal-insulator-semiconductors; Operation voltage; Oxide thickness; Photodetector; Photon currents; Photon flux; Schottky barrier height modulation; Schottky barriers; Tunneling diodes; Schottky barrier diodesjournal article10.1109/JSEN.2022.31414092-s2.0-85122880464