Jiang, Yu SenYu SenJiangHuang, Kuei WenKuei WenHuangYi, Sheng HanSheng HanYiWang, Chin I.Chin I.WangChang, Teng JanTeng JanChangKao, Wei ChungWei ChungKaoWang, Chun YuanChun YuanWangYin, Yu TungYu TungYinTZONG-LIN JAY SHIEHMIIN-JANG CHEN2023-04-112023-04-112022-12-0109552219https://scholars.lib.ntu.edu.tw/handle/123456789/630114Enhanced ferroelectric properties of nanoscale ZrO2 thin films by an HfO2 seed layer are demonstrated in metal-ferroelectric-semiconductor (Si) capacitors and transistors prepared with a low thermal budget of 400 °C. The seeding effect of the HfO2 layer leads to the enhancement of crystallization into the orthorhombic phase and the increase of remnant polarization of the sub-10 nm ZrO2/HfO2 bilayer structure. The ferroelectric field-effect transistor with the ZrO2/HfO2 bilayer gate stack reveals a large memory window of ~1.2 V and a steep subthreshold swing below 60 mV/decade. As compared with the Hf0.5Zr0.5O2 thin film, superior ferroelectric properties of the ZrO2/HfO2 bilayer structure show great potential for ferroelectric memory devices fabricated on Si substrates.Ferroelectric | Ferroelectric field-effect transistor | HfO 2 | Metal-ferroelectric-semiconductor structure | ZrO 2[SDGs]SDG7journal article10.1016/j.jeurceramsoc.2022.07.0312-s2.0-85136006433WOS:000863169100002https://api.elsevier.com/content/abstract/scopus_id/85136006433