Sensitivity enhancement of metal-oxide-semiconductor tunneling photodiode with trapped electrons in ultra-thin SiO2 layer

Chen, T.-Y.T.-Y.ChenHwu, J.-G.J.-G.HwuJENN-GWO HWU2018-09-102018-09-102013http://www.scopus.com/inward/record.url?eid=2-s2.0-84904917657&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/378068Sensitivity enhancement of metal-oxide-semiconductor tunneling photodiode with trapped electrons in ultra-thin SiO2 layerconference paper10.1149/05808.0079ecst