Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealing

Liao, K.F.K.F.LiaoChen, P.S.P.S.ChenLee, S.W.S.W.LeeChen, L.J.L.J.ChenCHEE-WEE LIU2020-06-162020-06-162005https://scholars.lib.ntu.edu.tw/handle/123456789/502091Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealingconference paper10.1016/j.nimb.2005.04.0942-s2.0-23644437836https://www.scopus.com/inward/record.uri?eid=2-s2.0-23644437836&doi=10.1016%2fj.nimb.2005.04.094&partnerID=40&md5=c2d8e2694db3b0a9ca99d813bb91aab0