Hole Confinement and 1/ f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide

Lin, Yu MinYu MinLinWu, San LeinSan LeinWuChang, Shoou JinnShoou JinnChangChen, Pang ShiuPang ShiuChenLiu, Chee WeeChee WeeLiu2009-03-252018-07-062009-03-252018-07-062006http://ntur.lib.ntu.edu.tw//handle/246246/148239en-USHole Confinement and 1/ f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistorsjournal article