Initial growth of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) on GaAs: Key to the attainment of a low interfacial density of states

MINGHWEI HONGLu, Z.H.Z.H.LuKwo, J.J.KwoKortan, A.R.A.R.KortanMannaerts, J.P.J.P.MannaertsKrajewski, J.J.J.J.KrajewskiHsieh, K.C.K.C.HsiehChou, L.J.L.J.ChouCheng, K.Y.K.Y.Cheng2019-12-272019-12-272000https://scholars.lib.ntu.edu.tw/handle/123456789/443484[SDGs]SDG7Initial growth of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) on GaAs: Key to the attainment of a low interfacial density of statesjournal article10.1063/1.1257302-s2.0-0000017076https://www.scopus.com/inward/record.uri?eid=2-s2.0-0000017076&doi=10.1063%2f1.125730&partnerID=40&md5=0a51cd3a7b98b24cbd197354ed5f9009