Wang NJiang FHu ZLiao Y.-S.YUNN-SHIUAN LIAO2021-08-052021-08-052017https://www.scopus.com/inward/record.uri?eid=2-s2.0-85094139961&partnerID=40&md5=a265c3d3bdd0e413f446d2d2a9e1223fhttps://scholars.lib.ntu.edu.tw/handle/123456789/576232The constant load scratching experiment were carried out on the C-plane sapphire with Rockwell indenter to investigate crack initiation and propagation. The surface morphology of sapphire substrate was detected by scanning electron microscopy (SEM). The depths of scratches and pile-up of sapphire material were measured by a 3D optical profiler. The fracture mechanism of sapphire was analyzed. The experimental results showed that the Hertz trailing cracks were observed in the center of the groove at low load. The surface morphology is almost symmetrical when _ _ scratching along (1100) and (0110) direction. But it is asymmetric when scratching along (1210) and _ _ _ (1120) direction. And the phenomenon of slip can be observed evidently. The anisotropic scratching patterns were closely related to the activated slip/twinning systems. ? ISAAT 2017.All right reserved.Morphology; Piles; Sapphire; Scanning electron microscopy; Surface morphology; C-plane sapphire; Constant loads; Crack initiation and propagation; Fracture mechanisms; Low load; Optical profiler; Rockwell indenter; Sapphire substrates; Cracksconference paper2-s2.0-85094139961