Kuo, Shu-TingShu-TingKuoTuan, Wei-HsingWei-HsingTuanShieh, JayJayShiehWang, Sea-FueSea-FueWang2008-12-312018-06-282008-12-312018-06-28200709552219http://ntur.lib.ntu.edu.tw//handle/246246/95462https://www.scopus.com/inward/record.uri?eid=2-s2.0-34748829168&doi=10.1016%2fj.jeurceramsoc.2007.02.215&partnerID=40&md5=48c2e9f518e12e810257fe44a04dc24bVarious amounts of silver particles, 0.08-7.7 mol%, are mixed with zinc oxide powder and subsequently co-fired at 800-1200 °C. The effects of Ag addition on the microstructural evolution and electrical properties of ZnO are investigated. A small Ag doping amount (<0.76 mol%) promotes the grain growth of ZnO; however, a reversed trend in grain growth is observed for a relatively larger Ag addition (>3.8 mol%). It is evident that a tiny amount of Ag (∼0.08 mol%) may dissolve into the ZnO lattice. High-resolution TEM observations give direct evidences on the segregation of Ag solutes at the ZnO grain boundaries. The grain boundary resistance of ZnO increases 35-fold with the presence of Ag solute segregates. The Ag-doped ZnO system exhibits a nonlinear electric current-voltage characteristic, confirming the presence of an electrostatic barrier at the grain boundaries. The barrier is approximately 2 V for a single grain boundary. © 2007 Elsevier Ltd. All rights reserved.application/pdf918650 bytesapplication/pdfen-USAg; Electrical properties; Impedance; Microstructure-final; ZnOComposition effects; Crystal microstructure; Current voltage characteristics; Doping (additives); Electric impedance; Grain boundaries; Grain growth; Microstructural evolution; Silver; Zinc oxide; Electrostatic barrier; Grain boundary resistance; Metal oxide ceramics; Composition effects; Crystal microstructure; Current voltage characteristics; Doping (additives); Electric impedance; Grain boundaries; Grain growth; Metal oxide ceramics; Microstructural evolution; Silver; Zinc oxidejournal article10.1016/j.jeurceramsoc.2007.02.2152-s2.0-34748829168http://ntur.lib.ntu.edu.tw/bitstream/246246/95462/1/57.pdf