High performance self-aligned inversion-channel MOSFETs with In 0.53 Ga 0.47 As channel and ALD-Al 2 O 3 gate dielectric

Chiu, HCHCChiuChang, PPChangHuang, MLMLHuangLin, TDTDLinChang, YHYHChangHuang, JCJCHuangChen, SZSZChenKwo, JJKwoTsai, Wen-RuWen-RuTsaiMINGHWEI HONG2018-09-102018-09-102009http://scholars.lib.ntu.edu.tw/handle/123456789/349422High performance self-aligned inversion-channel MOSFETs with In 0.53 Ga 0.47 As channel and ALD-Al 2 O 3 gate dielectricconference paper