林浩雄Lin, Hao-Hsiung臺灣大學:電子工程學研究所林自強Lin, Tzu-ChiangTzu-ChiangLin2010-07-142018-07-102010-07-142018-07-102008U0001-0508200815074500http://ntur.lib.ntu.edu.tw//handle/246246/189053本論文研究砷化鋁鎵類人眼光偵測器之設計模擬與製程，以實現反應度高度趨近於國際照明協會(Commission Internationale de l''Eclairage)制定的視見函數(photopic luminosity function)光偵測器。元件結構包含AlxGa1-xAs PIN接面、於PIN接面中心插入兩步驟四階段漸變層以及於PIN接面之上的內建濾波層。PIN接面貢獻光偵測器之主要頻譜反應度，並加入漸變層以加強長波長範圍的反應度，以及濾波層以消除短波長的反應度。本研究中，最趨近於視見函數之光偵測器反應度峰值為0.096A/W於558 nm，國際照明協會制定的頻譜反應度誤差因數f1’僅為5.8%。研究光偵測器特性之數值模擬方法也於本論文中探討，並與實驗結果符合。We have studied the design, simulation and fabrication of AlGaAs ambient light detectors with a spectral response highly matched to Commission Internationale de l''Eclairage (CIE) photopic luminosity function. The detectors consist of an AlxGa1-xAs PIN junction, a two-step-four-section compositional grading structure centered in the PIN junction, and a built-in filtering structure on top of the PIN junction. The PIN junction contributes to main responsivity of the detector. The compositional grading structure, inserted into the PIN junction, is used to fill the spectral response in the long wavelength range. The filtering structure is used to filter out the short wavelength photons so as to fit the short wavelength shoulder of the CIE function. The peak responsivity of the best matching detector is 0.096 A/W at 558 nm, which corresponds to 164 pA/lux in photometric unit. The CIE defined spectral mismatch index f1’ of the detector is as low as 5.8%. Numerical simulations for the detector characteristics have also been developed, whose results are in good agreements with the experimental data.中文摘要 Ibstract IIontents IIIable Caption Vigure Caption VIhapter 1 Introduction 1hapter 2 Device Process and Measurement 11.1 Molecular beam epitaxy 11.2 Device process 12.2.1 Cleaning 12.2.2 Lithographing 12.2.3 P-type metal contact 14.2.4 Lift-off 14.2.5 Device isolation 14.2.6 Rapid thermal annealing 15.3 Device measurement 15.3.1 I-V measurement 15.3.2 C-V measurement 15.3.3 Spectral response measurement 16hapter 3 Simulation Models 21.1 Band diagram calculation 21.2 Design principle 27.3 Quantum efficiency simulation model 28.3.1 Filtering region simulation model 29.3.2 Absorption region simulation model 32hapter 4 Results and Discussions 43.1 Design and fabrication of the built-in filtering region 43.2 Design and fabrication of the main and auxiliary absorption region 44.3 Simulation 48.3.1 Filtering region simulation 48.3.2 Absorption region simulation 50.4 Electrical characteristics 51.4.1 I-V characteristics 51.4.2 Effect of bias voltage on the responsivity 52.5 Mismatch index 53hapter 5 Conclusion 71eferences 721748722 bytesapplication/pdfen-US砷化鋁鎵人眼光偵測器模擬AlGaAsCIEdetectorsimulationthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/189053/1/ntu-97-R95943052-1.pdf