High-k Al2O3 gate dielectrics prepared by oxidation of aluminum film in nitric acid followed by high-temperature annealing

JENN-GWO HWU2018-09-102018-09-102004http://www.scopus.com/inward/record.url?eid=2-s2.0-2942650753&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/307546High-k Al2O3 gate dielectrics prepared by oxidation of aluminum film in nitric acid followed by high-temperature annealingjournal article10.1109/TED.2004.828274