Piezoelectric field effect transistor (PEFET) using In0.2Ga0.8As/Al0.35Ga0.65As/In0.2Ga0.8A s/GaAs strained layer structure on (111)B GaAs substrate

Dept. of Electr. Eng., National Taiwan Univ.Lu, S.S.S.S.LuHuang, C.L.C.L.HuangLuSS2007-04-192018-07-062007-04-192018-07-061994-05N/Ahttp://ntur.lib.ntu.edu.tw//handle/246246/2007041910042618application/pdf314346 bytesapplication/pdfen-USPiezoelectric field effect transistor (PEFET) using In0.2Ga0.8As/Al0.35Ga0.65As/In0.2Ga0.8A s/GaAs strained layer structure on (111)B GaAs substratejournal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910042618/1/00289246.pdf