Amorphous-silicon thin-film transistors made at 28°C on clear-plastic substrates by interfacial stress engineering

I-CHUN CHENG2018-09-102018-09-102007http://www.scopus.com/inward/record.url?eid=2-s2.0-37549043267&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/332095[SDGs]SDG7Amorphous-silicon thin-film transistors made at 28°C on clear-plastic substrates by interfacial stress engineeringjournal article10.1889/1.2716494